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DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BSDB-5000-1B 50 AMP SILICON BRIDGE RECTIFIERS FEATURES MECHANICAL SPECIFICATION SDB PACKAGE SHOWN ACTUAL SIZE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE INTEGRALLY MOLDED HEAT SINK PROVIDES VERY LOW THERMAL RESISTANCE FOR MAXIMUM HEAT TRANSFER SPACE SAVING IN-LINE DESIGN FOR PRINTED CIRCUIT BOARD APPLICATIONS Through Hole for #8 Screw BW BL BL AC + UL RECOGNIZED - FILE #E124962 RoHS COMPLIANT HEAT SINK LM LL LD LO LS LS LS MECHANICAL DATA ON AI E (c)E E AII II E C(c)AE AHO OO Case: Case: Molded epoxy with integral heat sink Epoxy carries a U/L Flammability rating of 94V-0 Terminals: Round silver plated copper pins or fast-on terminals Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case Mounting Position: Any. Through hole for #8 screw. Max. mounting torque = 20 in-lb. Weight: 0.55 Ounces (16.0 Grams) MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS 2HG A 6F 3(c)! # (c)(c)! #1 (c)(c)& 6! 9 3(c)E #$) ! 71 % ) " )#& 2(c)& 6! 9 (c)(c) 3#3 9 ! # 7 D(c)A @ ! 9 8(c)0 (c)' 7(c) (c)"6! (c) 54 1 % )$1 &! CB 7 ( % ! ' %| 21 )!" 3 ! 0 (c)! ( (c)' ! (c)! #$ (c)" ! (c) ! (c) (c) #! & %$ #! | PARAMETER (TEST CONDITIONS) Series Number SYMBOL SDB 5000 50 35 50 SDB 5001 100 70 100 RATINGS SDB 5002 200 140 200 SDB 5004 400 280 400 50 600 1.10 1.02 1 50 2500 1.10 -55 to +175 SDB 5006 600 420 600 SDB 5008 800 560 800 SDB 5010 1000 700 1000 Average Forward Rectified Current @ T = 55 C Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). T = 175 C Forward Voltage (Per Diode) at 25 Amps DC Maximum Average DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance, Junction to Case Junction Operating and Storage Temperature Range Max. Typ. @ T = 25 C @ T = 125 C X V U W i i E49 s r q h p i gh f TT dca e8bDY QP RI o 8o MinimumInsulation Breakdown Voltage (Circuit to Case) Vo VOLTS C/W C T S 6 IR 5 Vi oo In 66 ee Maximum Peak Recurrent Reverse Voltage a a Ve ec 6 Maximum RMS Voltage Vae i 6 Maximum DC Blocking Voltage Ve Ia 6 e 8e 8 m k l 6 j h i 6 e(c) 6 | g 8e f vtr88p n usq nn o Hy8ev 6t xw u A AAA3/4 1/2 AA 1/4 * HH(c) vv* (c) 6e 8 8 H8e 6~ } |e{r8y tw zx d ver 6 e (R) e AO x UU U vU 6a a vY a 6 O U UNITS VOLTS AMPS VOLTS A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BSDB-5000-2B 50 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES SDB5000 - SDB5010 60 Peak Forward Surge Current (Amperes) Average Forward Current, Io (Amperes) 50 40 30 20 10 T = 175 C 0 25 75 125 175 Case Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 10 Instantaneous Forward Current (Amperes) Instantaneous Reverse Current, I (Milcroamperes) T = 125 C 1.0 10 0.1 1.0 T = 25 C T = 25 C Pulse Width = 300 S 1% Duty Cycle 0.1 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS y u u u u ou / E50 86 745|1|( 320 )) IG |H|E F CA B|9 @ D 1.8 2.0 .01 | S R Q X (c) P W ## ||" Bridge Mounted on 9" x 4" x 5" Thick (22.9cm x 10.2cm x 12.9cm) Finned Al. Plate || || | %% ||$ '' |& Resistive and Inductive Loads !! || y V U T || |
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